Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

First current density (A/cm^2)

Required number in A/cm^2. Current density J1 for the first test point.

Second current density (A/cm^2)

Required number in A/cm^2. Current density J2 for the second test point; it must differ from J1.

First median time to failure (h)

Required number in h. Median time to failure t1 measured at J1.

Second median time to failure (h)

Required number in h. Median time to failure t2 measured at J2.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Extract Black's-law current-density exponent n from two electromigration median-time-to-failure measurements taken under otherwise matching conditions. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Current-density exponent

Returned number. Two-point exponent n = ln(t1/t2) / ln(J2/J1).

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• First current density must be at least 5e-324.
• Second current density must be at least 5e-324.
• First median time to failure must be at least 5e-324.
• Second median time to failure must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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