Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Polishing pressure (psi)

Required number in psi. Downward polishing pressure applied to the wafer. Must be greater than 0 psi.

Pad speed (rpm)

Required number in rpm. Pad rotational speed used to calibrate the coefficient. Must be greater than 0 rpm; rpm is not linear surface velocity.

Preston coefficient (nm/(psi*rpm))

Optional number in nm/(psi*rpm). Preston proportionality coefficient for the pad and slurry system. Must be at least 0.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute the chemical mechanical polishing removal rate from the linear Preston equation. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Removal rate (nm/min)

Returned number in nm/min. Linear Preston material removal rate.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Polishing pressure must be at least 5e-324.
• Pad speed must be at least 5e-324.
• Preston coefficient must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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