Doped Silicon Sheet Resistance Calculator
Compute the sheet resistance of a uniformly doped silicon film assuming constant electron mobility.
Description
Estimate doped silicon film sheet resistance from donor concentration and thickness using a fixed electron mobility at 300 K.
Sheet resistance expresses the resistance of a uniform thin film independently of square size. This calculator first estimates n-type silicon resistivity with a fixed 1200 cm²/(V·s) electron mobility, then divides by film thickness.
When to use Doped Silicon Sheet Resistance Calculator
- Make a quick n-type silicon sheet-resistance estimate
- Study inverse scaling with donor concentration or film thickness
- Cross-check the reciprocal sheet-conductance result under the same fixed-mobility assumption
How the calculation works
Conductivity is q·μn·ND, resistivity is its reciprocal, and sheet resistance is resistivity divided by thickness in centimeters. One micrometer equals 10⁻⁴ cm.1
Rs = 1 / (q·μn·ND·t), with μn = 1200 cm²/(V·s) Interpreting the result
Ohms per square is conventionally written Ω/sq; 'per square' describes geometry and is not another physical length unit.
Assumptions and limitations
- The fixed mobility is only a rough moderate-doping assumption and does not vary with doping, temperature, field, strain, or scattering.
- The model assumes uniform donor concentration, complete ionization, one dominant carrier type, and uniform thickness.
- Contacts, spreading resistance, surface depletion, quantum effects, and four-point-probe corrections are omitted.
References
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Semiconductor Materials and pn Junction Fundamentals — University of Michigan