Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Film etch rate (nm/min)

Required number in nm/min. Etch rate of the target film. Must be at least 0 nm/min; 0 yields selectivity 0.

Mask etch rate (nm/min)

Required number in nm/min. Etch rate of the masking material. Must be greater than 0 nm/min.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Divide the film etch rate by the mask etch rate to get the etch selectivity. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Selectivity

Returned number. Selectivity ratio of film removal to mask removal; zero when the film does not etch.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Film etch rate must be at least 0.
• Mask etch rate must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Etch Rate Calculator

  Divide the removed thickness (initial film thickness minus final film thickness) by the etch time to get the average etch rate.

• CVD Deposition Rate Calculator

  Divide the deposited film thickness (final thickness minus initial thickness) by the process time to get the average CVD deposition rate.

• ALD Growth Per Cycle Calculator

  Divide the total ALD film thickness (final minus initial) by the number of cycles to get the average growth per cycle.