Use this electronics calculation for a first-pass component, converter, signal, motor, or sensor estimate when the stated operating conditions and units match the device data.

On Resistance (Ω) (Ω)

Required number input.

Gate Charge (C) (C)

Required number input.

Calculate the common SiC MOSFET device figure of merit RDS(on)×Qg from specified on-resistance and total gate charge at matching test conditions. The tool evaluates the supplied inputs together and returns the named outputs below; it does not infer omitted operating conditions or change the units shown.^[1]

Figure Of Merit (Ω·C) (Ω·C)

The resulting figure of merit (ω·c) returned as a number.

• MOSFET threshold voltage is not a recommended fully-on gate voltage. Conduction and switching loss depend on gate drive, charge plateaus, current, drain voltage, switching speed, temperature, package parasitics, reverse recovery, dead time, and thermal conditions.
• Use finite inputs in the displayed units and preserve more precision than the final presentation requires. Independently verify safety-critical, financial, compliance, or production decisions.

Check the result against the current datasheet and worst-case operating corners, then verify the circuit or measurement with simulation and bench testing where failure matters.

• TRIAC Trigger Current

  Estimate TRIAC gate current from drive voltage, gate drop, and total series resistance; this does not predict the device's specified trigger threshold.

• GaN HEMT Rds On Tempco

  Calculate average GaN HEMT on-resistance temperature coefficient as percent change per Celsius degree between two measured temperatures; this is not a local derivative.

• Junction-to-Ambient Thermal Resistance

  Infer effective junction-to-ambient thermal resistance as (Tj−Ta)/P for a steady operating point. The value depends on board and airflow conditions and is not necessarily the datasheet test value.