Use this electronics calculation for a first-pass component, converter, signal, motor, or sensor estimate when the stated operating conditions and units match the device data.

Total gate charge (nC)

Required number input.

Gate drive current (A)

Required number input.

Compute MOSFET gate charge time in nanoseconds as total gate charge in nC divided by gate drive current in A. The tool evaluates the supplied inputs together and returns the named outputs below; it does not infer omitted operating conditions or change the units shown.^[1]

Gate charge time (ns)

The resulting gate charge time returned as a number.

• MOSFET threshold voltage is not a recommended fully-on gate voltage. Conduction and switching loss depend on gate drive, charge plateaus, current, drain voltage, switching speed, temperature, package parasitics, reverse recovery, dead time, and thermal conditions.
• Use finite inputs in the displayed units and preserve more precision than the final presentation requires. Independently verify safety-critical, financial, compliance, or production decisions.

Check the result against the current datasheet and worst-case operating corners, then verify the circuit or measurement with simulation and bench testing where failure matters.

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  Estimate IGBT gate charge as constant gate-drive current times charging duration; actual current waveforms require integration.

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  Calculate the common SiC MOSFET device figure of merit RDS(on)×Qg from specified on-resistance and total gate charge at matching test conditions.