Use this electronics calculation for a first-pass component, converter, signal, motor, or sensor estimate when the stated operating conditions and units match the device data.

Driver voltage (V)

Required number input.

Gate resistor (ohm)

Required number input.

Compute the peak MOSFET gate current as the gate driver voltage divided by the gate resistor. The tool evaluates the supplied inputs together and returns the named outputs below; it does not infer omitted operating conditions or change the units shown.^[1]

Peak gate current (A)

The resulting peak gate current returned as a number.

• Compact electronics formulas omit some combination of tolerances, temperature drift, bandwidth, loading, parasitics, noise spectrum, nonlinearity, clipping, calibration, layout, and device-specific limits. Typical datasheet values are not guaranteed limits.
• Use finite inputs in the displayed units and preserve more precision than the final presentation requires. Independently verify safety-critical, financial, compliance, or production decisions.

Check the result against the current datasheet and worst-case operating corners, then verify the circuit or measurement with simulation and bench testing where failure matters.

• ESD Human Body Model Current

  Estimate idealized HBM short-circuit peak current from charging voltage and the 1500-ohm series resistor; not a substitute for a JS-001 waveform test.

• NTC Inrush Peak

  Compute the peak inrush current through an NTC inrush limiter as the bus voltage divided by the NTC cold resistance.

• Gate Charge Time

  Compute MOSFET gate charge time in nanoseconds as total gate charge in nC divided by gate drive current in A.