Surface Roughness Mobility Calculator

Scale a reference mobility to vertical effective field using a surface roughness inverse square law.

Description

Scale a reference mobility to vertical effective field using a surface roughness inverse square law.

Surface Roughness Mobility Calculator is a focused tool for the following task. Scale a reference mobility to vertical effective field using a surface roughness inverse square law. It reports Mobility from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.

When to use Surface Roughness Mobility

Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Effective field (V/cm)
Required number in V/cm. Vertical effective field.
Reference field (V/cm)
Required number in V/cm. Reference field at which the reference mobility holds.
Reference mobility (cm^2/Vs)
Required number in cm^2/Vs. Mobility at the reference field.

The cited overview of Electron mobility supplies background for the terminology and domain context used by this tool.1

How Surface Roughness Mobility works

Scale a reference mobility to vertical effective field using a surface roughness inverse square law. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Mobility (cm^2/Vs)
Returned number in cm^2/Vs. Surface-roughness-limited mobility.

Limitations and assumptions

  • Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
  • Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Alternative or Complementary approaches

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

References

  1. Electron mobility — Wikipedia contributors

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