Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Temperature (K)

Required number in K. Lattice temperature.

Reference mobility (cm^2/Vs)

Required number in cm^2/Vs. Measured mobility at the reference temperature.

Reference temperature (K)

Required number in K. Temperature at which the reference mobility was measured.

Temperature exponent

Required number. Calibrated negative exponent in the mobility power law.

The cited overview of Electron mobility supplies background for the terminology and domain context used by this tool.^[1]

Scale a reference low-field mobility to temperature using the phonon-limited power law with exponent -2.42. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Mobility (cm^2/Vs)

Returned number in cm^2/Vs. Phonon-limited mobility.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Temperature must be at least 5e-324.
• Reference mobility must be at least 5e-324.
• Reference temperature must be at least 5e-324.
• Temperature exponent must be no greater than -5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Impurity Scattering Mobility Calculator

  Scale a reference mobility to temperature and doping using ionized impurity scattering with a 1.5 power law.

• Surface Roughness Mobility Calculator

  Scale a reference mobility to vertical effective field using a surface roughness inverse square law.

• Ballistic Mean Free Path Calculator

  Estimate the ballistic mean free path from low-field mobility using λ = (μ·Vt/vsat)·1e7 with thermal voltage Vt=0.02585 V (300 K) and saturation velocity vsat=1e7 cm/s (λ[nm]=μ·0.02585). Input mobility μ>0 cm²/V·s must be the low-field, non-degenerate value; rpm vs linear-velocity and per-area vs total distinctions do not apply. Model assumes Maxwell-Boltzmann statistics and constant vsat, valid only near 300 K as a quasi-ballistic estimate.