Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Parallel strain

Required number.

Normal strain

Required number.

Conduction-band deformation potential (eV)

Required number in eV.

The cited overview of Band gap supplies background for the terminology and domain context used by this tool.^[1]

Calculate the hydrostatic conduction-band shift from a deformation potential and the trace of a biaxial strain tensor; shear-induced valley splitting is not included. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Hydrostatic band edge shift (meV)

Returned number in meV.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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  Calculate the antiphase boundary (APB) energy per unit area (mJ/m²) from the per-atom APB energy (eV/atom) and the planar atomic density (1/nm²). Model: E = apbEnergyPerAtom × atomDensity × 160.2176634 mJ·m⁻²/(eV·nm⁻²); assumes an ideal planar APB with uniform density. Per-area result is not the total boundary energy (multiply by area for total energy). apbEnergyEvPerAtom must be ≥0 eV (0 yields 0 mJ/m²); atomDensityPerNm2 must be >0 1/nm². No relaxation, segregation, or temperature dependence is included.

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