Semiconductor Stacking Fault Tetrahedral Energy Calculator

Budget explicit four-face regular stacking-fault tetrahedron with six matched edge line energies, not single planar fault or defect stability/nucleation claim.

Description

A regular stacking-fault tetrahedron has four triangular faces and six edges.

A regular stacking-fault tetrahedron has four triangular faces and six edges.1

Separate matched face and edge energy densities form an explicit geometric energy budget.

When to use Semiconductor Stacking Fault Tetrahedral Energy Calculator

Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.

How to use Semiconductor Stacking Fault Tetrahedral Energy Calculator and understand its results

  1. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
  2. Enter observedTetrahedronEdgeM, callerStackingFaultEnergyJM2, callerMatchedEdgeLineEnergyJM, following the field table and rules below, then run the tool.
  3. Read modeledTetrahedralFaultFaceEnergyJ, modeledTetrahedralFaultEdgeEnergyJ, totalModeledFaultEnergyJ. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
  4. Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
Input fieldMeaningValue typeRequirement
observedTetrahedronEdgeMObserved tetrahedron edge mnumberRequired
callerStackingFaultEnergyJM2Caller stacking fault energy j m2numberRequired
callerMatchedEdgeLineEnergyJMCaller matched edge line energy j mnumberRequired

Use a positive edge length in metres, nonnegative face energy per square metre, and nonnegative line energy per metre. Four equilateral faces total √3 times edge length squared; six edges total six times edge length. Return both contributions and sum.

E_faces=√3a²γ; E_edges=6aλ; E_total=E_faces+E_edges

Symbols follow the input and output meanings and the calculation rules above.

Output fieldMeaningValue type
modeledTetrahedralFaultFaceEnergyJModeled tetrahedral fault face energy jnumber
modeledTetrahedralFaultEdgeEnergyJModeled tetrahedral fault edge energy jnumber
totalModeledFaultEnergyJTotal modeled fault energy jnumber
json
{
  "input": {
    "observedTetrahedronEdgeM": 2,
    "callerStackingFaultEnergyJM2": 3,
    "callerMatchedEdgeLineEnergyJM": 4
  },
  "output": {
    "modeledTetrahedralFaultFaceEnergyJ": 20.784609690826528,
    "modeledTetrahedralFaultEdgeEnergyJ": 48,
    "totalModeledFaultEnergyJ": 68.78460969082653
  }
}

Limitations and assumptions

Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.

Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected.

Alternative or Complementary methods

For a related review, use Semiconductor Twin Boundary Energy Calculator: A repeated-boundary cell energy must be compared with a matched bulk reference and divided by the number of equivalent boundaries. This gives a signed boundary excess per area. For a complementary step, use Semiconductor Wafer Bonding Interface Energy Calculator: An interface-energy estimate can separate observed delamination work from independently measured fixture work. Dividing that signed remainder by newly delaminated area gives an energy-per-area observation.

References

  1. Semiconductor Stacking Fault Tetrahedral Energy Calculator — tool.io

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