Semiconductor Spintronic Spin Injection Efficiency Calculator
Audit actual independently spin-resolved injected current polarization, preserve sign; not generic spin-valve magnetoresistance or assumed interface injection efficiency.
Description
Spin-resolved injected currents define a signed polarization.
Spin-resolved injected currents define a signed polarization.1
The sign indicates which supplied spin channel carries more current.
When to use Semiconductor Spintronic Spin Injection Efficiency Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Spintronic Spin Injection Efficiency Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedInjectedSpinUpAmps, observedInjectedSpinDownAmps, following the field table and rules below, then run the tool.
- Read signedSpinInjectionPolarizations. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedInjectedSpinUpAmps | Observed injected spin up amps | list of number | Required |
| observedInjectedSpinDownAmps | Observed injected spin down amps | list of number | Required |
Use aligned nonempty nonnegative spin-up and spin-down currents in amperes. Each pair must have positive total current. Divide up-minus-down by up-plus-down without taking an absolute value.
P_i=(Iup_i−Idown_i)/(Iup_i+Idown_i) Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| signedSpinInjectionPolarizations | Signed spin injection polarizations | list of number |
{
"input": {
"observedInjectedSpinUpAmps": [
3,
1
],
"observedInjectedSpinDownAmps": [
1,
3
]
},
"output": {
"signedSpinInjectionPolarizations": [
0.5,
-0.5
]
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor Spintronic Spin Lifetime Calculator: A diffusion-relaxation model relates a matched spin diffusion length and diffusivity to a spin lifetime. This calculation uses already established values rather than fitting a spatial signal. For a complementary step, use Semiconductor Spintronic Magnetoresistance Vs Field Calculator: A field-resistance trace can be expressed relative to an actual zero-field resistance. Retaining signed changes distinguishes resistance increases from decreases.
References
Similar or alternative tools
- Semiconductor Spintronic Spin Lifetime Calculator
A diffusion-relaxation model relates a matched spin diffusion length and diffusivity to a spin lifetime. This calculation uses already established values rather than fitting a spatial signal.
- Semiconductor Spintronic Magnetoresistance Vs Field Calculator
A field-resistance trace can be expressed relative to an actual zero-field resistance. Retaining signed changes distinguishes resistance increases from decreases.