Semiconductor Spin Fet Magnetoresistance Calculator
Actual same-condition spin-device antiparallel-minus-parallel resistance normalized by parallel resistance. Not ideal transistor functionality, spin polarization or a predicted universal magnetoresistance.
Description
Magnetoresistance depends on the declared reference resistance state.
Magnetoresistance depends on the declared reference resistance state.1
A parallel-state-normalized comparison retains a negative value if the antiparallel resistance is lower.
When to use Semiconductor Spin Fet Magnetoresistance Calculator
Use this tool to obtain signedObservedMagnetoresistancePercent from the supplied records using the stated calculation. Establish the device or material, operating point, units and independently applicable measurement or model calibration.
How to use Semiconductor Spin Fet Magnetoresistance Calculator and understand its results
- Establish the device or material, operating point, units and independently applicable measurement or model calibration.
- Enter actualParallelStateResistanceOhms, actualAntiparallelStateResistanceOhms, using the field meanings and rules below, then run the tool.
- Read result.signedObservedMagnetoresistancePercent. Use the units and sign conventions below, and review any unknown records separately.
- Correct any reported input issue and run again. Before using a successful result, check the stated units, signs, reference scope and observation coverage.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| actualParallelStateResistanceOhms | Actual parallel state resistance ohms | number | Required |
| actualAntiparallelStateResistanceOhms | Actual antiparallel state resistance ohms | number | Required |
Require strictly positive parallel and antiparallel resistances in ohms. Divide antiparallel by parallel, subtract one and scale by one hundred. A lower antiparallel resistance produces negative magnetoresistance. The implementation does not infer spin polarization or fit a transistor model.
magnetoresistancePercent=100×(R_antiparallel/R_parallel−1) Use the matching field units and the exact boundary, ordering and reference rules above.
| Output field | Meaning | Value type |
|---|---|---|
| result | Qualified observed calculation or explicit reference | object |
| result.signedObservedMagnetoresistancePercent | One hundred times antiparallel/parallel resistance minus one. | number |
{
"input": {
"actualParallelStateResistanceOhms": 100,
"actualAntiparallelStateResistanceOhms": 120
},
"output": {
"result": {
"signedObservedMagnetoresistancePercent": 19.999999999999996
}
}
}Limitations and assumptions
Device structure, material state, operating conditions and calibration determine applicability. The result does not infer missing physical parameters, verify a transport mechanism or validate a fabricated device model.
Missing required fields, unknown fields, wrong types and violated rules return input issues. Numeric values and outputs must be finite. Extremely large composite outputs are rejected.
Alternative or Complementary methods
For a related step, use Semiconductor Topological Insulator Surface State Conductance Calculator: A topological-insulator surface state is distinct from an ideal one-dimensional transmitting channel. For a complementary comparison, use Semiconductor Graphene Minimum Conductivity Calculator: Graphene minimum-conductivity conventions depend on the transport limit and measurement setup.
References
Similar or alternative tools
- Semiconductor Topological Insulator Surface State Conductance Calculator
A topological-insulator surface state is distinct from an ideal one-dimensional transmitting channel.
- Semiconductor Graphene Minimum Conductivity Calculator
Graphene minimum-conductivity conventions depend on the transport limit and measurement setup.