Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Sheet Ohms Per Square (Ω/□)

Required number in Ω/□.

Length Micrometers (µm)

Required number in µm.

Width Micrometers (µm)

Required number in µm.

Contact Ohms (Ω)

Required number in Ω.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Series source/drain resistance from silicide sheet resistance, rectangular squares and two contact resistances. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Total Ohms (Ω)

Returned number in Ω.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Sheet Ohms Per Square must be at least 0.
• Length Micrometers must be at least 0.
• Width Micrometers must be at least 0.
• Contact Ohms must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Silicide Sheet Resistance Calculator

  Convert silicide film resistivity and thickness into the sheet resistance of the silicided layer.

• Transfer Length Calculator

  Convert specific contact resistivity and sheet resistance into the contact transfer length. Formula: Lt [µm] = 1e4 · sqrt(ρc [Ω·cm²] / Rsh [Ω/sq]). Inputs: ρc > 0 Ω·cm², Rsh > 0 Ω/sq. Output: Lt > 0 µm. Assumes uniform sheet resistance under the contact and the transmission-line model (long contact, negligible metal resistance).

• Diode Ideality Factor Calculator

  Extract the diode ideality factor n from two forward-bias points on the exponential Shockley relation. Formula: n = (V2 - V1) / (Vt·ln(I2/I1)), where thermal voltage Vt = k·T/q (k=1.380649e-23 J/K, q=1.602176634e-19 C). Inputs: I1>0 mA, I2>0 mA and I1≠I2, V1 and V2 finite V, T>0 K (default 300 K). Output: n>0 (physical diode typically 1 ≤ n ≤ 2; n=1 ideal diffusion, n≈2 recombination/generation; n outside 1-2 indicates series resistance, high injection, or measurement error). Assumes forward exponential region, negligible series resistance, and constant temperature.