Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Rds(on) at 25 °C (Ω)

Required number in Ω. Datasheet on-resistance at the 25 degree Celsius reference.

Tempco (%/°C)

Required number in %/°C. Device-specific linear Rds(on) temperature coefficient in percent per degree Celsius.

Junction temperature (°C)

Required number in °C. Junction temperature for the linear extrapolation.

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.^[1]

Extrapolate SiC MOSFET on-resistance to junction temperature using a linear percent-per-degree temperature coefficient. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Rds(on) at temperature (Ω)

Returned number in Ω. Linearized on-resistance at the requested junction temperature.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Rds(on) at 25 °C must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• APD Breakdown Voltage Temperature Shift Calculator

  Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary.

• InP Lattice Constant Calculator

  Compute the InP lattice constant at a temperature using the 25 degrees Celsius reference value 5.869 angstrom and a documented thermal expansion coefficient of 4.56e-6 per kelvin.

• Ballistic Mean Free Path Calculator

  Estimate the ballistic mean free path from low-field mobility using λ = (μ·Vt/vsat)·1e7 with thermal voltage Vt=0.02585 V (300 K) and saturation velocity vsat=1e7 cm/s (λ[nm]=μ·0.02585). Input mobility μ>0 cm²/V·s must be the low-field, non-degenerate value; rpm vs linear-velocity and per-area vs total distinctions do not apply. Model assumes Maxwell-Boltzmann statistics and constant vsat, valid only near 300 K as a quasi-ballistic estimate.