Semiconductor Si Photonics Free Carrier Dispersion Calculator
Evaluate caller locally calibrated electron/hole free-carrier index derivatives on observed added densities, not fixed silicon empirical constants or optical phase shift formula.
Description
Free-carrier dispersion can be evaluated with locally calibrated electron and hole index derivatives.
Free-carrier dispersion can be evaluated with locally calibrated electron and hole index derivatives.1
The signed coefficients specify each carrier contribution instead of assuming universal silicon constants.
When to use Semiconductor Si Photonics Free Carrier Dispersion Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Si Photonics Free Carrier Dispersion Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedAddedElectronPerM3, observedAddedHolePerM3, callerMatchedElectronIndexCoefficientM3, callerMatchedHoleIndexCoefficientM3, following the field table and rules below, then run the tool.
- Read modeledSignedFreeCarrierIndexChanges. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedAddedElectronPerM3 | Observed added electron per m3 | list of number | Required |
| observedAddedHolePerM3 | Observed added hole per m3 | list of number | Required |
| callerMatchedElectronIndexCoefficientM3 | Caller matched electron index coefficient m3 | number | Required |
| callerMatchedHoleIndexCoefficientM3 | Caller matched hole index coefficient m3 | number | Required |
Use aligned nonempty nonnegative added electron/hole densities per cubic metre and finite signed local coefficients in cubic metres. Multiply and add contributions for a dimensionless index change. The linear local model’s calibration range is supplied externally.
Δn_i=addedElectrons_i×electronCoefficient+addedHoles_i×holeCoefficient Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| modeledSignedFreeCarrierIndexChanges | Modeled signed free carrier index changes | list of number |
{
"input": {
"observedAddedElectronPerM3": [
1,
2
],
"observedAddedHolePerM3": [
2,
1
],
"callerMatchedElectronIndexCoefficientM3": -0.01,
"callerMatchedHoleIndexCoefficientM3": -0.02
},
"output": {
"modeledSignedFreeCarrierIndexChanges": [
-0.05,
-0.04
]
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor Sheet Resistance Implant Dose Calculator: An implanted sheet dose gives sheet conductance only after activation and mobility are established. This model uses integrated areal dose rather than a uniform volume density and film thickness. For a complementary step, use Semiconductor Silicon Photonics Phase Shifter Vpi Calculator: A phase-shifter Vπ is the voltage change associated with a π phase change on a chosen linear branch. Measured unwrapped phase data can estimate Vπ and its interaction-length product.
References
Similar or alternative tools
- Semiconductor Sheet Resistance Implant Dose Calculator
An implanted sheet dose gives sheet conductance only after activation and mobility are established. This model uses integrated areal dose rather than a uniform volume density and film thickness.
- Semiconductor Silicon Photonics Phase Shifter Vpi Calculator
A phase-shifter Vπ is the voltage change associated with a π phase change on a chosen linear branch. Measured unwrapped phase data can estimate Vπ and its interaction-length product.