Doped Silicon Sheet Conductance Calculator
Compute the sheet conductance of a uniformly doped silicon film assuming constant electron mobility.
Description
Estimate doped silicon film sheet conductance from donor concentration and thickness using fixed electron mobility at 300 K.
Sheet conductance is the reciprocal of sheet resistance and increases with both carrier concentration and film thickness. This quick model assumes n-type silicon electron mobility remains fixed at 1200 cm²/(V·s).
When to use Doped Silicon Sheet Conductance Calculator
- Make a quick n-type silicon sheet-conductance estimate
- Compare how thickness or donor concentration changes conductance per square
- Cross-check sheet resistance under the identical fixed-mobility model
How the calculation works
The model calculates conductivity q·μn·ND in S/cm and multiplies it by film thickness in centimeters. One micrometer contributes a 10⁻⁴ conversion factor.1
Gs = q·μn·ND·t, with μn = 1200 cm²/(V·s) Interpreting the result
A larger positive result means a more conductive sheet. The value is a two-dimensional film property, not total conductance between arbitrary contacts.
Assumptions and limitations
- Mobility is fixed rather than calculated from doping or temperature.
- Uniform doping, complete ionization, one dominant carrier type, and uniform thickness are assumed.
- Contact geometry, contact resistance, current crowding, and nonuniform layers are omitted.
References
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Semiconductor Materials and pn Junction Fundamentals — University of Michigan