Semiconductor Schottky Barrier Inhomogeneity Sigma Calculator
Actual Schottky-barrier spatial distribution population SD, not infer inhomogeneity from oneI-Vcurve or subtract measurement uncertainty. Independent same-condition barrier assessments and area sampling external.
Description
Barrier inhomogeneity describes dispersion among independently assessed Schottky barrier heights.
Barrier inhomogeneity describes dispersion among independently assessed Schottky barrier heights.1
A population standard deviation of those values differs from fitting a transport-derived distribution model.
When to use Semiconductor Schottky Barrier Inhomogeneity Sigma Calculator
Use this tool to obtain observedBarrierMeanEv, observedPopulationBarrierSigmaEv from the supplied records using the stated calculation. Establish the device or material, operating point, units and independently applicable measurement or model calibration.
How to use Semiconductor Schottky Barrier Inhomogeneity Sigma Calculator and understand its results
- Establish the device or material, operating point, units and independently applicable measurement or model calibration.
- Enter actualIndependentlyAssessedBarrierHeightsEv, using the field meanings and rules below, then run the tool.
- Read result.observedBarrierMeanEv, result.observedPopulationBarrierSigmaEv. Use the units and sign conventions below, and review any unknown records separately.
- Correct any reported input issue and run again. Before using a successful result, check the stated units, signs, reference scope and observation coverage.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| actualIndependentlyAssessedBarrierHeightsEv | Actual independently assessed barrier heights ev | list of number | Required |
Require a nonempty nonnegative barrier-height list in electronvolts. Compute its arithmetic mean and the square root of the mean squared deviations using population denominator n, not n−1. A one-value list returns zero sigma. No current/temperature fitting or assumed Gaussian distribution is supplied.
meanBarrierEv=mean(heights); populationSigmaEv=sqrt(mean((height_i−meanBarrierEv)²)) Use the matching field units and the exact boundary, ordering and reference rules above.
| Output field | Meaning | Value type |
|---|---|---|
| result | Qualified observed calculation or explicit reference | object |
| result.observedBarrierMeanEv | Arithmetic mean of the supplied barrier heights in electronvolts. | number |
| result.observedPopulationBarrierSigmaEv | Population standard deviation with denominator n, in electronvolts. | number |
{
"input": {
"actualIndependentlyAssessedBarrierHeightsEv": [
0.5,
0.7,
0.9
]
},
"output": {
"result": {
"observedBarrierMeanEv": 0.7000000000000001,
"observedPopulationBarrierSigmaEv": 0.16329931618554522
}
}
} Limitations and assumptions
Device structure, material state, operating conditions and calibration determine applicability. The result does not infer missing physical parameters, verify a transport mechanism or validate a fabricated device model.
Missing required fields, unknown fields, wrong types and violated rules return input issues. Numeric values and outputs must be finite. Lists and matrices must be dense, without missing cells. Numeric lists allow at most 10000 entries, subject to the narrower lengths and code rules above. Extremely large composite outputs are rejected.
Alternative or Complementary methods
For a related step, use Semiconductor Ohmic Contact Specific Resistivity Vs Doping Calculator: Specific contact resistivity concerns an interface under a defined extraction model. For a complementary comparison, use Semiconductor Laser Linewidth Schawlow Townes Calculator: A Schawlow–Townes linewidth reference depends on the laser model and correction conventions.
References
Similar or alternative tools
- Semiconductor Ohmic Contact Specific Resistivity Vs Doping Calculator
Specific contact resistivity concerns an interface under a defined extraction model.
- Semiconductor Laser Linewidth Schawlow Townes Calculator
A Schawlow–Townes linewidth reference depends on the laser model and correction conventions.