RTD Peak-to-Valley Ratio
Compute the peak-to-valley current ratio of a resonant tunneling diode from its peak and valley currents.
Description
Compute the peak-to-valley current ratio of a resonant tunneling diode from its peak and valley currents.
RTD Peak-to-Valley Ratio is a focused tool for the following task. Compute the peak-to-valley current ratio of a resonant tunneling diode from its peak and valley currents. It reports Peak-to-valley ratio from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use RTD Peak-to-Valley Ratio
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Peak current (mA)
- Required number in mA. Current at the resonant peak.
- Valley current (mA)
- Required number in mA. Current in the valley between peaks.
The cited overview of P–n junction supplies background for the terminology and domain context used by this tool.1
How RTD Peak-to-Valley Ratio works
Compute the peak-to-valley current ratio of a resonant tunneling diode from its peak and valley currents. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- Peak-to-valley ratio
- Returned number. Ratio of peak to valley current; higher is better.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
-
P–n junction — Wikipedia contributors
Similar or alternative tools
- Resonant Tunneling Diode Peak To Valley Ratio
Peak-to-valley current ratio for a measured resonant-tunneling diode I–V curve.
- TSV Keep-Out Zone Calculator
Compute the placement keep-out zone around a through-silicon via from its pitch and a keep-out ratio. Keep-out = pitch × ratio.
- Diffusion Capacitance Calculator
Compute the diffusion capacitance of a forward-biased diode from stored-charge lifetime and current. Formula: Cdiff [nF] = 1e9 · (τ [ns]·1e-9 · I [mA]·1e-3) / (n · Vt [V]), where Vt = k·T/q (k=1.380649e-23 J/K, q=1.602176634e-19 C). Equivalent: Cdiff [F] = τ·I/(n·Vt). Inputs: I ≥ 0 mA, τ > 0 ns, n ≥ 1 (default 1), T > 0 K (default 300 K). Output: Cdiff ≥ 0 nF. Assumes low-level injection, negligible depletion capacitance, and quasi-neutral stored charge τ·I.