Semiconductor Redistribution Layer Resistance Calculator
Budget actual variable-width RDL sections using independently measured sheet resistance and via series inventory, not uniform copper resistivity path formula.
Description
A redistribution path with different section widths has a series resistance budget.
A redistribution path with different section widths has a series resistance budget.1
Measured sheet resistances and a separate via inventory make each contribution explicit.
When to use Semiconductor Redistribution Layer Resistance Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Redistribution Layer Resistance Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedRdlSectionLengthsM, observedRdlSectionWidthsM, callerMeasuredRdlSheetOhms, observedIndependentRdlViaOhms, following the field table and rules below, then run the tool.
- Read sectionRdlResistanceOhms, totalMeasuredRdlPathOhms. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedRdlSectionLengthsM | Observed RDL section lengths m | list of number | Required |
| observedRdlSectionWidthsM | Observed RDL section widths m | list of number | Required |
| callerMeasuredRdlSheetOhms | Caller measured RDL sheet ohms | list of number | Required |
| observedIndependentRdlViaOhms | Observed independent RDL via ohms | list of number | Required |
Use aligned nonempty nonnegative section lengths, positive widths in metres, and nonnegative sheet resistances in ohms per square, plus a nonnegative via-resistance list. Multiply length/width by sheet resistance per section and add all section and via values. Via count need not match section count.
Rsection_i=(length_i/width_i)×Rsheet_i; Rtotal=ΣRsections+ΣRvias Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| sectionRdlResistanceOhms | Section RDL resistance ohms | list of number |
| totalMeasuredRdlPathOhms | Total measured RDL path ohms | number |
{
"input": {
"observedRdlSectionLengthsM": [
1,
2
],
"observedRdlSectionWidthsM": [
1,
2
],
"callerMeasuredRdlSheetOhms": [
2,
3
],
"observedIndependentRdlViaOhms": [
0.5
]
},
"output": {
"sectionRdlResistanceOhms": [
2,
3
],
"totalMeasuredRdlPathOhms": 5.5
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor Sheet Resistance Implant Dose Calculator: An implanted sheet dose gives sheet conductance only after activation and mobility are established. This model uses integrated areal dose rather than a uniform volume density and film thickness. For a complementary step, use Semiconductor Through Silicon Via Aspect Ratio Calculator: A TSV aspect ratio compares measured depth with the minimum diameter. Screening a matched inventory against a supplied maximum ratio highlights dimensional review candidates.
References
Similar or alternative tools
- Semiconductor Sheet Resistance Implant Dose Calculator
An implanted sheet dose gives sheet conductance only after activation and mobility are established. This model uses integrated areal dose rather than a uniform volume density and film thickness.
- Semiconductor Through Silicon Via Aspect Ratio Calculator
A TSV aspect ratio compares measured depth with the minimum diameter. Screening a matched inventory against a supplied maximum ratio highlights dimensional review candidates.