Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Channel count

Optional integer. Number of fully transmitting spin-resolved modes. Use two for one spin-degenerate orbital channel.

The cited overview of Quantum tunnelling supplies background for the terminology and domain context used by this tool.^[1]

Calculate ideal Landauer resistance as h/(Ne²), where N is the number of fully transmitting spin-resolved modes; a spin-degenerate orbital channel contributes two modes. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Resistance (ohm)

Returned number in ohm. Quantized channel resistance.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Channel count must be at least 1.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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