Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

2DEG sheet density (cm^-2)

Required number in cm^-2. Measured two-dimensional electron-gas sheet density.

Sheet resistance (ohm/square)

Required number in ohm/square. Measured sheet resistance of the conducting channel.

The cited overview of Electron mobility supplies background for the terminology and domain context used by this tool.^[1]

Calculate GaN HEMT two-dimensional electron-gas mobility from measured sheet density and sheet resistance. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

2DEG mobility (cm^2/(V*s))

Returned number in cm^2/(V*s). Carrier mobility calculated as 1/(q ns Rs).

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• 2DEG sheet density must be at least 5e-324.
• Sheet resistance must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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