Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Mismatch

Required number. Signed film/substrate lattice mismatch; only its magnitude enters the force-balance equation.

Burgers vector (nm)

Required number in nm. Magnitude of the active dislocation Burgers vector.

Poisson ratio

Required number. Isotropic Poisson ratio of the strained material.

Dislocation-line angle (deg)

Required number in deg. Angle between the Burgers vector and dislocation line; commonly 60 degrees for zinc-blende 60-degree dislocations.

Slip-direction angle (deg)

Required number in deg. Angle between the slip direction and interface-normal direction used by the force-balance geometry.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Solve the isotropic Matthews-Blakeslee force-balance equation for the upper physical critical-thickness root, including Poisson ratio and dislocation geometry. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Critical thickness (nm)

Returned number in nm. Upper solution of h=A ln(h/b), representing the continuum critical thickness.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Mismatch must be at least -0.2.
• Mismatch must be no greater than 0.2.
• Burgers vector must be at least 5e-324.
• Poisson ratio must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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