Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Linear rate constant A (nm)

Required number in nm. Linear rate constant A of the Deal-Grove model. Must be at least 0 nm.

Parabolic rate constant B (nm^2/hour)

Required number in nm^2/hour. Parabolic rate constant B of the Deal-Grove model. Must be greater than 0 nm²/hour.

Oxidation time (hour)

Required number in hour. Duration of the thermal oxidation. Must be at least 0 hour; 0 yields 0 nm.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Solve the zero-initial-thickness Deal-Grove relation x² + A·x = B·t for thermal oxide thickness. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Oxide thickness (nm)

Returned number in nm. Thermal oxide thickness from the zero-initial-thickness Deal-Grove solution.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Linear rate constant A must be at least 0.
• Parabolic rate constant B must be at least 5e-324.
• Oxidation time must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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