Semiconductor OTFT Mobility Calculator
Extract Otft saturation mobility from actual multi-point sqrt(Id) gate trace and measured geometry/capacitance; channel/branch independently verified, not silicon doping-mobility formula.
Description
Saturation mobility extraction combines a square-root current slope with channel geometry and gate capacitance per area.
Saturation mobility extraction combines a square-root current slope with channel geometry and gate capacitance per area.1
The selected branch and capacitance model determine whether the inferred OTFT mobility is meaningful.
When to use Semiconductor OTFT Mobility Calculator
Use this tool when you need to calculate the stated measurement summary or conditional model from matched observations. Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
How to use Semiconductor OTFT Mobility Calculator and understand its results
- Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
- Enter observedGateV, observedSquareRootSaturationCurrentSqrtAmps, observedChannelLengthM, observedChannelWidthM, callerGateCapacitanceFM2, following the field table and calculation rules below, then run the tool.
- Read extractedSaturationMobilityM2VoltSecond, linearFitRSquared. Use the output table and calculation rules below to interpret units, signs, crossings, and flags.
- Correct any input issues and run again. Before using a successful result, review its units, signs, evidence coverage, and stated model or reference assumptions.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedGateV | Observed gate v | list of number | Required |
| observedSquareRootSaturationCurrentSqrtAmps | Observed square root saturation current sqrt amps | list of number | Required |
| observedChannelLengthM | Observed channel length m | number | Required |
| observedChannelWidthM | Observed channel width m | number | Required |
| callerGateCapacitanceFM2 | Caller gate capacitance f m2 | number | Required |
Require positive length, width, and capacitance per area, with nonnegative square-root current samples. Fit those currents against aligned gate voltages and require a strictly positive slope. Scale its square by twice length divided by width and capacitance; report the regression R².
The regression helper accepts 2–10000 aligned finite pairs with nonzero predictor variance. It fits ordinary least squares with a free intercept using shifted coordinates; samples need not be sorted unless this tool additionally requires it. R² is clamped to [0,1] and is one for constant responses. Transformed fits use the stated log or reciprocal predictor/response basis; R² is a fit summary rather than a confidence interval.
μ=2L×b²/(W×Carea), sqrt(I)=a+bVg Read these symbols with the field meanings and branch or reference rules above.
| Output field | Meaning | Value type |
|---|---|---|
| extractedSaturationMobilityM2VoltSecond | Extracted saturation mobility m2 volt second | number |
| linearFitRSquared | Linear fit r squared | number |
{
"input": {
"observedGateV": [
1,
2,
3
],
"observedSquareRootSaturationCurrentSqrtAmps": [
1,
2,
3
],
"observedChannelLengthM": 1,
"observedChannelWidthM": 2,
"callerGateCapacitanceFM2": 1
},
"output": {
"extractedSaturationMobilityM2VoltSecond": 1,
"linearFitRSquared": 1
}
}Limitations and assumptions
Measurements, branch identification, units, and model applicability must be independently established. Results do not supply universal material constants, a complete physical model, or operating-condition approval.
Missing required fields, unknown fields, wrong types, and violated calculation rules return input issues. Numeric values must be finite; nonfinite numeric outputs are rejected. Arrays must be dense, with no missing cells. Numeric lists allow at most 10000 entries, subject to smaller tool-specific bounds above.
Alternative or Complementary methods
For a related task, use Semiconductor OTFT Threshold Voltage Calculator: A square-root saturation-current branch can provide a fitted transistor threshold intercept. Its interpretation depends on independently selecting a suitable branch rather than assuming a universal OTFT threshold. For a complementary step, use Semiconductor IGZO Mobility Calculator: IGZO saturation mobility extraction connects a measured current slope with channel geometry and gate capacitance. Independently establishing the saturation branch is essential to interpreting the fitted mobility.
References
-
Semiconductor OTFT Mobility Calculator — tool.io
Similar or alternative tools
- Semiconductor OTFT Threshold Voltage Calculator
A square-root saturation-current branch can provide a fitted transistor threshold intercept. Its interpretation depends on independently selecting a suitable branch rather than assuming a universal OTFT threshold.
- Semiconductor IGZO Mobility Calculator
IGZO saturation mobility extraction connects a measured current slope with channel geometry and gate capacitance. Independently establishing the saturation branch is essential to interpreting the fitted mobility.