Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Antiparallel Ohms (Ω)

Required number in Ω.

Parallel Ohms (Ω)

Required number in Ω.

The cited overview of Magnetoresistive RAM supplies background for the terminology and domain context used by this tool.^[1]

Tunnel-magnetoresistance ratio of an MTJ from antiparallel and parallel resistance measurements. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Tmr Percent (%)

Returned number in %.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Antiparallel Ohms must be at least 0.
• Parallel Ohms must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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