Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Mobility components (cm^2/Vs)

Required list in cm^2/Vs. Component mobilities limited by each scattering mechanism.

The cited overview of Electron mobility supplies background for the terminology and domain context used by this tool.^[1]

Combine parallel scattering-limited mobility components into a single mobility using the Matthiessen rule. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Mobility (cm^2/Vs)

Returned number in cm^2/Vs. Combined Matthiessen mobility.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Impurity Scattering Mobility Calculator

  Scale a reference mobility to temperature and doping using ionized impurity scattering with a 1.5 power law.

• Phonon Mobility Calculator

  Scale a reference low-field mobility to temperature using the phonon-limited power law with exponent -2.42.

• Ballistic Mean Free Path Calculator

  Estimate the ballistic mean free path from low-field mobility using λ = (μ·Vt/vsat)·1e7 with thermal voltage Vt=0.02585 V (300 K) and saturation velocity vsat=1e7 cm/s (λ[nm]=μ·0.02585). Input mobility μ>0 cm²/V·s must be the low-field, non-degenerate value; rpm vs linear-velocity and per-area vs total distinctions do not apply. Model assumes Maxwell-Boltzmann statistics and constant vsat, valid only near 300 K as a quasi-ballistic estimate.