Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Extracted photons

Required number. Photons that escape the device.

Generated photons

Required number. Photons generated inside the active region.

The cited overview of Light-emitting diode supplies background for the terminology and domain context used by this tool.^[1]

Compute LED light extraction efficiency from generated and extracted photon counts. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Extraction efficiency (%)

Returned number in %. Fraction of generated photons that escape the device.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Extracted photons must be at least 0.
• Generated photons must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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