Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Radiative lifetime (ns)

Required number in ns. Radiative recombination lifetime.

Non-radiative lifetime (ns)

Required number in ns. Non-radiative recombination lifetime.

The cited overview of Light-emitting diode supplies background for the terminology and domain context used by this tool.^[1]

Compute LED internal quantum efficiency from the radiative and non-radiative carrier lifetimes. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Internal quantum efficiency (%)

Returned number in %. Fraction of injected carriers that recombine radiatively.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Radiative lifetime must be at least 5e-324.
• Non-radiative lifetime must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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