Semiconductor InGaAs Critical Thickness Calculator
Extract actual InGaAs relaxation-onset thickness crossings from independent matched strain/stack trials, not existing Matthews–Blakeslee force-balance root or universal mismatch estimate.
Description
Relaxation onset depends on measured layer thickness and a chosen strain-relaxation criterion.
Relaxation onset depends on measured layer thickness and a chosen strain-relaxation criterion.1
The crossings belong to the supplied InGaAs stack trials rather than a universal force-balance thickness.
When to use Semiconductor InGaAs Critical Thickness Calculator
Use this tool when you need to locate all observed criterion crossings on a matched measurement branch. Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
How to use Semiconductor InGaAs Critical Thickness Calculator and understand its results
- Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
- Enter observedTestedLayerThicknessNm, observedRelaxationFractions, callerRelaxationOnsetFraction, following the field table and calculation rules below, then run the tool.
- Read measuredCriticalThicknessCrossingsNm. Use the output table and calculation rules below to interpret units, signs, crossings, and flags.
- Correct any input issues and run again. Before using a successful result, review its units, signs, evidence coverage, and stated model or reference assumptions.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedTestedLayerThicknessNm | Observed tested layer thickness nm | list of number | Required |
| observedRelaxationFractions | Observed relaxation fractions | list of number | Required |
| callerRelaxationOnsetFraction | Caller relaxation onset fraction | number | Required |
Require positive thicknesses, relaxation fractions in [0,1], and a criterion in [0,1]. Apply the crossing algorithm below; multiple and absent crossings are preserved.
The crossing helper requires at least two nonempty aligned response and coordinate lists, with coordinates strictly increasing. Record exact sample hits at the chosen level and linearly interpolate each adjacent strict sign change around that level. Preserve sample order and remove adjacent duplicate coordinates. No crossing returns an empty list; an exact-level plateau returns all its sampled coordinates. Additional domain restrictions above remain in force.
crossing=x_i+(x_(i+1)−x_i)×(level−y_i)/(y_(i+1)−y_i) for strict sign changes Read these symbols with the field meanings and branch or reference rules above.
| Output field | Meaning | Value type |
|---|---|---|
| measuredCriticalThicknessCrossingsNm | Measured critical thickness crossings nm | list of number |
{
"input": {
"observedTestedLayerThicknessNm": [
10,
20,
30
],
"observedRelaxationFractions": [
0,
0.1,
0.5
],
"callerRelaxationOnsetFraction": 0.2
},
"output": {
"measuredCriticalThicknessCrossingsNm": [
22.5
]
}
}Limitations and assumptions
The criterion and branch are independently supplied. Multiple crossings, exact-level plateaus, and absent crossings do not establish one unique physical rating or transition, and the tool does not select an experimental procedure.
Missing required fields, unknown fields, wrong types, and violated calculation rules return input issues. Numeric values must be finite; nonfinite numeric outputs are rejected. Arrays must be dense, with no missing cells. Numeric lists allow at most 10000 entries, subject to smaller tool-specific bounds above.
Alternative or Complementary methods
For a related task, use Semiconductor Molding Compound Glass Transition Temperature Calculator: A baseline-corrected heat-capacity step can mark a molding compound glass transition. A caller-selected fraction of the measured step range defines the crossing level and its dependence on the supplied scan. For a complementary step, use Semiconductor 2d Material Mobility Vs Thickness Calculator: A measured thickness-mobility calibration belongs to a specific two-dimensional material and matched conditions. Its local slope supports in-range comparison without assigning a discrete layer number.
References
Similar or alternative tools
- Semiconductor Molding Compound Glass Transition Temperature Calculator
A baseline-corrected heat-capacity step can mark a molding compound glass transition. A caller-selected fraction of the measured step range defines the crossing level and its dependence on the supplied scan.
- Semiconductor 2d Material Mobility Vs Thickness Calculator
A measured thickness-mobility calibration belongs to a specific two-dimensional material and matched conditions. Its local slope supports in-range comparison without assigning a discrete layer number.