Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Rated cycles

Required integer. Rated endurance cycles at the specified verify margin.

Completed cycles

Required integer. Program-erase cycles already completed.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Calculate rated flash program-erase cycles remaining and the percentage consumed from completed and rated cycle counts. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Remaining cycles

Returned integer. Rated cycles not yet consumed, clamped to zero after the rating is exceeded.

Endurance used (%)

Returned number in %. Completed cycles divided by rated endurance, expressed as a percentage.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Rated cycles must be at least 1.
• Completed cycles must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• PCM Endurance Cycles

  Remaining nominal PCM program/erase cycles from rated endurance and recorded cycle count.

• ALD Growth Per Cycle Calculator

  Divide the total ALD film thickness (final minus initial) by the number of cycles to get the average growth per cycle.

• Flash Threshold Voltage Shift Calculator

  Calculate the magnitude of a flash-cell threshold shift from trapped electron count and effective charge-storage capacitance.