Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Coercive Volts Per Meter (V/m)

Required number in V/m.

Film Meters (m)

Required number in m.

The cited overview of Ferroelectricity supplies background for the terminology and domain context used by this tool.^[1]

Ideal ferroelectric switching-voltage magnitude from measured coercive field and ferroelectric film thickness. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Coercive Volts (V)

Returned number in V.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Coercive Volts Per Meter must be at least 0.
• Film Meters must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Ferroelectric Coercive Field

  Ferroelectric coercive-field magnitude from a measured coercive-voltage magnitude and active film thickness.

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  Compute the memristor threshold switching voltage from the switching field in MV/cm and oxide thickness in nanometres.

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  Remanent ferroelectric polarization magnitude from switched remanent charge and electrode area.