Semiconductor Electro Absorption Modulation Depth Calculator
Actual electroabsorption intensity modulation depth (Poff−Pon)/Poff, not field amplitude modulation, extinction-ratio dBor universal device response.
Description
Modulation depth depends on a declared optical-power reference state.
Modulation depth depends on a declared optical-power reference state.1
One minus modulated/reference power is a signed fraction rather than a decibel extinction ratio.
When to use Semiconductor Electro Absorption Modulation Depth Calculator
Use this tool to obtain signedObservedModulationDepthFraction from the supplied records using the stated calculation. Establish the device or material, operating point, units and independently applicable measurement or model calibration.
How to use Semiconductor Electro Absorption Modulation Depth Calculator and understand its results
- Establish the device or material, operating point, units and independently applicable measurement or model calibration.
- Enter independentlyMeasuredUnmodulatedOpticalPowerWatts, matchedModulatedOpticalPowerWatts, using the field meanings and rules below, then run the tool.
- Read result.signedObservedModulationDepthFraction. Use the units and sign conventions below, and review any unknown records separately.
- Correct any reported input issue and run again. Before using a successful result, check the stated units, signs, reference scope and observation coverage.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| independentlyMeasuredUnmodulatedOpticalPowerWatts | Independently measured unmodulated optical power watts | number | Required |
| matchedModulatedOpticalPowerWatts | Matched modulated optical power watts | number | Required |
Require positive unmodulated reference power and nonnegative modulated power in watts. Return one minus modulated/reference as a fraction. Modulated power above reference yields a negative result; no extinction ratio, decibel conversion or percentage scaling is applied.
signedModulationDepth=1−modulatedPower/referencePower Use the matching field units and the exact boundary, ordering and reference rules above.
| Output field | Meaning | Value type |
|---|---|---|
| result | Qualified observed calculation or explicit reference | object |
| result.signedObservedModulationDepthFraction | One minus modulated/reference power; signed fraction, not percent or decibels. | number |
{
"input": {
"independentlyMeasuredUnmodulatedOpticalPowerWatts": 10,
"matchedModulatedOpticalPowerWatts": 4
},
"output": {
"result": {
"signedObservedModulationDepthFraction": 0.6
}
}
}Limitations and assumptions
Device structure, material state, operating conditions and calibration determine applicability. The result does not infer missing physical parameters, verify a transport mechanism or validate a fabricated device model.
Missing required fields, unknown fields, wrong types and violated rules return input issues. Numeric values and outputs must be finite. Extremely large composite outputs are rejected.
Alternative or Complementary methods
For a related step, use Semiconductor Mach Zehnder Half Wave Voltage Calculator: A half-wave voltage–length product expresses a device-specific phase-modulation calibration. For a complementary comparison, use Semiconductor Ring Modulator Resonance Shift Vs Voltage Calculator: A ring modulator's resonance shift varies with the actual bias and device conditions.
References
Similar or alternative tools
- Semiconductor Mach Zehnder Half Wave Voltage Calculator
A half-wave voltage–length product expresses a device-specific phase-modulation calibration.
- Semiconductor Ring Modulator Resonance Shift Vs Voltage Calculator
A ring modulator's resonance shift varies with the actual bias and device conditions.