Semiconductor Dopant Diffusivity Calculator

Generic independently calibrated dopant Arrhenius diffusivity D0exp(−Ea/kBT), SIprefactor, eVactivation and kelvin. Not fixed dilute boron/arsenic/antimony silicon constants, charge-state diffusion or process-specific verified outcome.

Description

An Arrhenius diffusivity model uses a calibrated prefactor and activation energy at absolute temperature.

An Arrhenius diffusivity model uses a calibrated prefactor and activation energy at absolute temperature.1, 2

Its energy units must match the Boltzmann constant used in the exponential.

When to use Semiconductor Dopant Diffusivity Calculator

Use this tool to obtain conditionalDiffusivitySquareMetersPerSecond from the supplied records using the stated calculation. Establish the device or material, operating point, units and independently applicable measurement or model calibration.

How to use Semiconductor Dopant Diffusivity Calculator and understand its results

  1. Establish the device or material, operating point, units and independently applicable measurement or model calibration.
  2. Enter callerCalibratedPrefactorSquareMetersPerSecond, callerCalibratedActivationEnergyEv, temperatureKelvin, using the field meanings and rules below, then run the tool.
  3. Read result.conditionalDiffusivitySquareMetersPerSecond. Use the units and sign conventions below, and review any unknown records separately.
  4. Correct any reported input issue and run again. Before using a successful result, check the stated units, signs, reference scope and observation coverage.
Input fieldMeaningValue typeRequirement
callerCalibratedPrefactorSquareMetersPerSecondCaller calibrated prefactor square meters per secondnumberRequired
callerCalibratedActivationEnergyEvCaller calibrated activation energy evnumberRequired
temperatureKelvinTemperature kelvinnumberRequired

Require positive calibrated prefactor in m²/s, nonnegative activation energy in electronvolts and positive kelvin temperature. Evaluate the Arrhenius exponential using kB=8.617333262e−5 eV/K. The helper rejects an exponential that underflows exactly to zero; nonfinite output also fails. No parameters are fitted from measurements.

diffusivityM2PerS=D0×exp(−activationEnergyEv/(8.617333262e−5×temperatureKelvin))

Use the matching field units and the exact boundary, ordering and reference rules above.

Output fieldMeaningValue type
resultQualified observed calculation or explicit referenceobject
result.conditionalDiffusivitySquareMetersPerSecondArrhenius diffusivity from the supplied prefactor, electronvolt activation energy and kelvin temperature.number
json
{
  "input": {
    "callerCalibratedPrefactorSquareMetersPerSecond": 1,
    "callerCalibratedActivationEnergyEv": 0.025851999786,
    "temperatureKelvin": 300
  },
  "output": {
    "result": {
      "conditionalDiffusivitySquareMetersPerSecond": 0.36787944117144233
    }
  }
}

Limitations and assumptions

Device structure, material state, operating conditions and calibration determine applicability. The result does not infer missing physical parameters, verify a transport mechanism or validate a fabricated device model.

Missing required fields, unknown fields, wrong types and violated rules return input issues. Numeric values and outputs must be finite. Extremely large composite outputs are rejected.

Alternative or Complementary methods

For a related step, use Semiconductor Transient Enhanced Diffusion Factor Calculator: Transient-enhanced diffusion compares a measured transient diffusivity with matched equilibrium diffusivity. For a complementary comparison, use Semiconductor Nitridation Enhanced Diffusion Calculator: Nitridation-enhanced diffusion compares matched nitridated and unnitridated diffusivities.

References

  1. Semiconductor Dopant Diffusivity Calculator — tool.io

  2. SI defining constants: Boltzmann constant and elementary charge — National Institute of Standards and Technology

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