Semiconductor Btbt Generation Rate Kane Calculator
Explicit calibrated KaneA E^pexp(−B/E) generation-rate model with independently established coefficient units/material branch. Not existing Eexpcurrent prefactor, trap process, universal direct/indirect exponent or breakdown simulation.
Description
A calibrated Kane-form model combines a field power law with an exponential suppression term.
A calibrated Kane-form model combines a field power law with an exponential suppression term.1
Its prefactors, exponent and field units determine the conditional generation-rate convention.
When to use Semiconductor Btbt Generation Rate Kane Calculator
Use this tool to obtain conditionalBtbtGenerationRate from the supplied records using the stated calculation. Establish the device or material, operating point, units and independently applicable measurement or model calibration.
How to use Semiconductor Btbt Generation Rate Kane Calculator and understand its results
- Establish the device or material, operating point, units and independently applicable measurement or model calibration.
- Enter callerCalibratedKaneA, callerCalibratedKaneBVoltsPerMeter, callerCalibratedFieldExponent, actualElectricFieldVoltsPerMeter, using the field meanings and rules below, then run the tool.
- Read result.conditionalBtbtGenerationRate. Use the units and sign conventions below, and review any unknown records separately.
- Correct any reported input issue and run again. Before using a successful result, check the stated units, signs, reference scope and observation coverage.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| callerCalibratedKaneA | Caller calibrated kane a | number | Required |
| callerCalibratedKaneBVoltsPerMeter | Caller calibrated kane b volts per meter | number | Required |
| callerCalibratedFieldExponent | Caller calibrated field exponent | number | Required |
| actualElectricFieldVoltsPerMeter | Actual electric field volts per meter | number | Required |
Require nonnegative calibrated Kane A, positive Kane B in V/m, positive field exponent and positive measured field in V/m. Multiply the field power law by exp(−B/field). A zero A is accepted, but the exponential must still be representable and nonzero; exponential underflow and nonfinite outputs fail. Parameter units and applicability belong to the supplied calibration.
generationRate=A×field^exponent×exp(−B/field) Use the matching field units and the exact boundary, ordering and reference rules above.
| Output field | Meaning | Value type |
|---|---|---|
| result | Qualified observed calculation or explicit reference | object |
| result.conditionalBtbtGenerationRate | Calibrated A times field to the supplied exponent times exp(−B/field). | number |
{
"input": {
"callerCalibratedKaneA": 2,
"callerCalibratedKaneBVoltsPerMeter": 1,
"callerCalibratedFieldExponent": 2,
"actualElectricFieldVoltsPerMeter": 1
},
"output": {
"result": {
"conditionalBtbtGenerationRate": 0.7357588823428847
}
}
}Limitations and assumptions
Device structure, material state, operating conditions and calibration determine applicability. The result does not infer missing physical parameters, verify a transport mechanism or validate a fabricated device model.
Missing required fields, unknown fields, wrong types and violated rules return input issues. Numeric values and outputs must be finite. Extremely large composite outputs are rejected.
Alternative or Complementary methods
For a related step, use Semiconductor Sic Breakdown Field Calculator: SiC critical-field references depend on polytype, temperature and the adopted breakdown criterion. For a complementary comparison, use Semiconductor Impact Ionization Threshold Energy Calculator: Impact-ionization threshold energy depends on material and the adopted carrier process.
References
Similar or alternative tools
- Semiconductor Sic Breakdown Field Calculator
SiC critical-field references depend on polytype, temperature and the adopted breakdown criterion.
- Semiconductor Impact Ionization Threshold Energy Calculator
Impact-ionization threshold energy depends on material and the adopted carrier process.