• Calculate characteristic annealing diffusion length from diffusivity in nm²/hour and anneal time in hours.
• Compare fabrication or device scenarios while holding coefficients and unit conventions constant.
• Check a hand calculation before moving to a higher-fidelity process, circuit, or TCAD model.

This is the √(Dt) convention; an RMS displacement defined as √(2Dt), √(4Dt), or √(6Dt) is a different quantity.

• The model assumes constant diffusivity throughout the thermal cycle and omits concentration-dependent and transient-enhanced diffusion.
• Use parameters measured for the same material, geometry, temperature, and operating regime whenever the result informs engineering work.

• Anneal Activation Fraction

  Use Anneal Activation Fraction to calculate dopant activation fraction from a first-order activation rate constant and anneal duration. Choose this tool when you need to calculate characteristic annealing diffusion length from diffusivity in nm²/hour and anneal time in hours.

• Implant Straggle

  Use Implant Straggle to compute the ion implantation straggle as a fraction of the projected range. Choose this tool when you need to calculate characteristic annealing diffusion length from diffusivity in nm²/hour and anneal time in hours.