Semiconductor AlGaN Polarization Charge Calculator
Reconcile caller independently established AlGaN spontaneous/piezo and GaN polarization with explicit interface normal; not charge magnitude from measured 2DEG or assumed strain/composition model.
Description
Interface bound polarization charge depends on the difference between matched material polarizations and the chosen interface normal.
Interface bound polarization charge depends on the difference between matched material polarizations and the chosen interface normal.1
Spontaneous and piezoelectric AlGaN contributions remain explicit inputs.
When to use Semiconductor AlGaN Polarization Charge Calculator
Use this tool when you need to calculate the stated measurement summary or conditional model from matched observations. Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
How to use Semiconductor AlGaN Polarization Charge Calculator and understand its results
- Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
- Enter callerAlganSpontaneousPolarizationCM2, callerAlganPiezoPolarizationCM2, callerGanTotalPolarizationCM2, callerNormalAlganToGan, following the field table and calculation rules below, then run the tool.
- Read signedInterfaceBoundPolarizationChargeCM2. Use the output table and calculation rules below to interpret units, signs, crossings, and flags.
- Correct any input issues and run again. Before using a successful result, review its units, signs, evidence coverage, and stated model or reference assumptions.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| callerAlganSpontaneousPolarizationCM2 | Caller algan spontaneous polarization c m2 | number | Required |
| callerAlganPiezoPolarizationCM2 | Caller algan piezo polarization c m2 | number | Required |
| callerGanTotalPolarizationCM2 | Caller gan total polarization c m2 | number | Required |
| callerNormalAlganToGan | Caller normal algan to gan | boolean | Required |
Subtract both AlGaN polarization contributions from the total GaN polarization. Return that signed difference when the AlGaN-to-GaN normal flag is true and its negative otherwise. No composition-to-polarization coefficients are supplied.
ΔP=PGaN−PAlGaN,spontaneous−PAlGaN,piezo; charge=normalForward?ΔP:−ΔP Read these symbols with the field meanings and branch or reference rules above.
| Output field | Meaning | Value type |
|---|---|---|
| signedInterfaceBoundPolarizationChargeCM2 | Signed interface bound polarization charge c m2 | number |
{
"input": {
"callerAlganSpontaneousPolarizationCM2": -0.03,
"callerAlganPiezoPolarizationCM2": -0.01,
"callerGanTotalPolarizationCM2": -0.02,
"callerNormalAlganToGan": true
},
"output": {
"signedInterfaceBoundPolarizationChargeCM2": 0.019999999999999997
}
}Limitations and assumptions
Measurements, branch identification, units, and model applicability must be independently established. Results do not supply universal material constants, a complete physical model, or operating-condition approval.
Missing required fields, unknown fields, wrong types, and violated calculation rules return input issues. Numeric values must be finite; nonfinite numeric outputs are rejected.
Alternative or Complementary methods
For a related task, use Semiconductor Gan 2deg Density Vs Al Composition Calculator: A two-dimensional electron-gas density calibration belongs to a matched material stack and composition series. Interpolating that measured branch supplies an in-range estimate and local response slope. For a complementary step, use Semiconductor HEMT Threshold Voltage Calculator: A HEMT sheet-charge threshold budget combines band alignment with barrier capacitance per area. Signed charge and alignment conventions must be independently matched to the heterostructure model.
References
Similar or alternative tools
- Semiconductor Gan 2deg Density Vs Al Composition Calculator
A two-dimensional electron-gas density calibration belongs to a matched material stack and composition series. Interpolating that measured branch supplies an in-range estimate and local response slope.
- Semiconductor HEMT Threshold Voltage Calculator
A HEMT sheet-charge threshold budget combines band alignment with barrier capacitance per area. Signed charge and alignment conventions must be independently matched to the heterostructure model.