Semiconductor 2d Material Bandgap Layer Number Calculator

Compare actual direct/indirect spectral gap branches per discrete 2D layer count, preserve equal minima; not universal semiconductor bandgap lookup or MoS2 single-branch layer table.

Description

Direct and indirect spectral branches can compete for the lowest measured gap at each discrete layer count.

Direct and indirect spectral branches can compete for the lowest measured gap at each discrete layer count.1

Preserving equal minima avoids arbitrarily assigning a single branch in a degeneracy.

When to use Semiconductor 2d Material Bandgap Layer Number Calculator

Use this tool when you need to calculate the stated measurement summary or conditional model from matched observations. Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.

How to use Semiconductor 2d Material Bandgap Layer Number Calculator and understand its results

  1. Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
  2. Enter observed2dLayerCounts, observedDirectGapEv, observedIndirectGapEv, following the field table and calculation rules below, then run the tool.
  3. Read observedFundamentalGapEv, observedMinimumGapBranchIds. Use the output table and calculation rules below to interpret units, signs, crossings, and flags.
  4. Correct any input issues and run again. Before using a successful result, review its units, signs, evidence coverage, and stated model or reference assumptions.
Input fieldMeaningValue typeRequirement
observed2dLayerCountsObserved2d layer countslist of numberRequired
observedDirectGapEvObserved direct gap eVlist of numberRequired
observedIndirectGapEvObserved indirect gap eVlist of numberRequired

Use nonempty aligned positive direct and indirect gaps and strictly increasing safe-integer layer counts from 1 to 1,000. Take each pair’s minimum and label its branch direct, indirect, or degenerate on exact equality. One layer record is sufficient.

gap_i=min(direct_i,indirect_i); branch=direct<indirect?direct:direct>indirect?indirect:degenerate

Read these symbols with the field meanings and branch or reference rules above.

Output fieldMeaningValue type
observedFundamentalGapEvObserved fundamental gap eVlist of number
observedMinimumGapBranchIdsObserved minimum gap branch idslist of string
json
{
  "input": {
    "observed2dLayerCounts": [
      1,
      2,
      3
    ],
    "observedDirectGapEv": [
      2,
      1.8,
      1.7
    ],
    "observedIndirectGapEv": [
      2.5,
      1.5,
      1.2
    ]
  },
  "output": {
    "observedFundamentalGapEv": [
      2,
      1.5,
      1.2
    ],
    "observedMinimumGapBranchIds": [
      "direct",
      "indirect",
      "indirect"
    ]
  }
}

Limitations and assumptions

Measurements, branch identification, units, and model applicability must be independently established. Results do not supply universal material constants, a complete physical model, or operating-condition approval.

Missing required fields, unknown fields, wrong types, and violated calculation rules return input issues. Numeric values must be finite; nonfinite numeric outputs are rejected. Arrays must be dense, with no missing cells. Numeric lists allow at most 10000 entries, subject to smaller tool-specific bounds above.

Alternative or Complementary methods

For a related task, use Semiconductor Mos2 Bandgap Layer Dependence Calculator: MoS₂ gap measurements can be indexed by independently verified discrete layer count. A matched reference comparison preserves the difference between a new observation and that supplied catalog value. For a complementary step, use Semiconductor Black Phosphorus Bandgap Vs Layer Number Calculator: Black-phosphorus layer counts identify discrete measured gap records. A neighboring secant slope describes those recorded changes without asserting a universal layer power law.

References

  1. Semiconductor 2d Material Bandgap Layer Number Calculator — tool.io

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