Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Fault energy per atom (eV)

Required number in eV. Stacking fault formation energy per atom.

Atom density (1/nm²)

Required number in 1/nm². Atomic density on the fault plane.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Calculate the stacking fault energy per unit area from the fault energy per atom and the atomic surface density. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Stacking fault energy (mJ/m²)

Returned number in mJ/m². Stacking fault energy per unit area.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Fault energy per atom must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• APB Energy Calculator

  Calculate the antiphase boundary (APB) energy per unit area (mJ/m²) from the per-atom APB energy (eV/atom) and the planar atomic density (1/nm²). Model: E = apbEnergyPerAtom × atomDensity × 160.2176634 mJ·m⁻²/(eV·nm⁻²); assumes an ideal planar APB with uniform density. Per-area result is not the total boundary energy (multiply by area for total energy). apbEnergyEvPerAtom must be ≥0 eV (0 yields 0 mJ/m²); atomDensityPerNm2 must be >0 1/nm². No relaxation, segregation, or temperature dependence is included.

• Dislocation Density from Etch Pits

  Convert a counted number of etch pits on a measured field area into a dislocation density per square centimeter. Formula: D [1/cm²] = N / (A [µm²]·1e-8), where 1 µm² = 1e-8 cm², N is integer pit count ≥0, A>0 µm². Output D≥0 1/cm²; D=0 when N=0. Assumes each pit corresponds to one threading dislocation, uniform distribution, and accurate field area measurement.

• MOSFET Depletion Charge Calculator

  Compute the depletion charge per unit area at the onset of strong inversion.