Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Temperature (K)

Required number in K.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Estimate dilute arsenic diffusivity in silicon from temperature with the Arrhenius parameters D0 = 23 cm^2/s and Ea = 4.1 eV. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Arsenic diffusivity (cm^2/s)

Returned number in cm^2/s.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Temperature must be at least 800.
• Temperature must be no greater than 1600.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Antimony Diffusion Coefficient

  Estimate dilute antimony diffusivity in silicon from temperature with the Arrhenius parameters D0 = 0.214 cm^2/s and Ea = 3.65 eV.

• Boron Diffusion Coefficient

  Estimate dilute boron diffusivity in silicon from temperature with the Arrhenius parameters D0 = 0.76 cm^2/s and Ea = 3.46 eV.

• Phosphorus Diffusion Coefficient

  Estimate dilute phosphorus diffusivity in silicon from temperature with the Arrhenius parameters D0 = 3.85 cm^2/s and Ea = 3.66 eV.