Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Quantum efficiency (%)

Required number in %. External quantum efficiency.

Wavelength (nm)

Required number in nm. Vacuum wavelength of the incident light.

The cited overview of Photodiode supplies background for the terminology and domain context used by this tool.^[1]

Compute photodiode responsivity from quantum efficiency and wavelength using R equals eta times lambda over 1240. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Responsivity (A/W)

Returned number in A/W. Photocurrent per unit incident optical power.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Quantum efficiency must be at least 0.
• Quantum efficiency must be no greater than 100.
• Wavelength must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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  Compute the cavity photon lifetime from refractive index and total distributed loss using tau equals n over c times alpha.

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  Compute laser slope efficiency in watts per ampere from differential quantum efficiency and photon energy, where W/A numerically equals the efficiency fraction times photon energy in electronvolts.

• Laser Threshold Current Density Calculator

  Compute the laser threshold current density from active region thickness and recombination rate using J equals q times d times R.