Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Dose variation (%)

Required number in %. Exposure dose variation driving roughness.

LER sensitivity (nm/%)

Required number in nm/%. Line edge roughness sensitivity to dose, documented heuristic factor.

The cited overview of Photolithography supplies background for the terminology and domain context used by this tool.^[1]

Estimate 3-sigma line edge roughness as dose sensitivity in nanometers per percent times dose variation percent, using a documented heuristic. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

3-sigma LER (nm)

Returned number in nm. Estimated three-sigma line edge roughness.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Dose variation must be at least 0.
• LER sensitivity must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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