Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Resistivity Ohm Meters (Ω·m)

Required number in Ω·m.

Drift Length Meters (m)

Required number in m.

Path Width Meters (m)

Required number in m.

Path Thickness Meters (m)

Required number in m.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Ohmic drift-region resistance of an LDMOS from effective resistivity and a rectangular current path. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Drift Ohms (Ω)

Returned number in Ω.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Resistivity Ohm Meters must be at least 0.
• Drift Length Meters must be at least 0.
• Path Width Meters must be at least 0.
• Path Thickness Meters must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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• Transfer Length Calculator

  Convert specific contact resistivity and sheet resistance into the contact transfer length. Formula: Lt [µm] = 1e4 · sqrt(ρc [Ω·cm²] / Rsh [Ω/sq]). Inputs: ρc > 0 Ω·cm², Rsh > 0 Ω/sq. Output: Lt > 0 µm. Assumes uniform sheet resistance under the contact and the transmission-line model (long contact, negligible metal resistance).

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