• Solve equilibrium electron and hole concentrations for compensated material from donor, acceptor, and intrinsic concentrations.
• Compare fabrication or device scenarios while holding coefficients and unit conventions constant.
• Check a hand calculation before moving to a higher-fidelity process, circuit, or TCAD model.

The stable solver computes the majority carrier first, avoiding cancellation when acceptors exceed donors by many orders of magnitude.

• Ionized dopant concentrations are required; freeze-out, degeneracy, nonequilibrium quasi-Fermi levels, and multiple charge states are omitted.
• Use parameters measured for the same material, geometry, temperature, and operating regime whenever the result informs engineering work.

• Built-In Potential

  Use Built-In Potential to calculate positive 300 K pn-junction built-in potential from acceptor, donor, and intrinsic carrier concentrations. Choose this tool when you need to solve equilibrium electron and hole concentrations for compensated material from donor, acceptor, and intrinsic concentrations.

• Quasi-Fermi Level Splitting

  Use Quasi-Fermi Level Splitting to compute the electron quasi-Fermi level shift from the ratio of the electron to intrinsic carrier concentration at room temperature. Choose this tool when you need to solve equilibrium electron and hole concentrations for compensated material from donor, acceptor, and intrinsic concentrations.