Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Coupling factor

Optional number. Fraction of the upper-tier thermal load that couples to the lower tier. Must be between 0 and 1; 0 yields 0 °C rise.

Lower-tier thermal resistance (°C/W)

Required number in °C/W. Lower-tier thermal resistance from junction to ambient. Must be greater than 0 °C/W.

Upper-tier power (W)

Required number in W. Total power dissipated by the upper tier. Must be at least 0 W; 0 yields 0 °C rise.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Estimate the lower-tier temperature rise in a stacked 3D-IC from upper-tier power, a thermal coupling factor, and lower-tier thermal resistance. Temperature rise = power × couplingFactor × thermalResistance. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Temperature rise (°C)

Returned number in °C. Estimated lower-tier temperature rise above ambient, at least 0 °C.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Coupling factor must be at least 0.
• Coupling factor must be no greater than 1.
• Lower-tier thermal resistance must be at least 5e-324.
• Upper-tier power must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Package Thermal Resistance Calculator

  Derive the junction-to-ambient thermal resistance from the steady-state temperature rise over dissipated power.

• Self-Heating Temperature Rise Calculator

  Compute on-die self-heating temperature rise from dissipated power and thermal resistance.

• Diode Ideality Factor Calculator

  Extract the diode ideality factor n from two forward-bias points on the exponential Shockley relation. Formula: n = (V2 - V1) / (Vt·ln(I2/I1)), where thermal voltage Vt = k·T/q (k=1.380649e-23 J/K, q=1.602176634e-19 C). Inputs: I1>0 mA, I2>0 mA and I1≠I2, V1 and V2 finite V, T>0 K (default 300 K). Output: n>0 (physical diode typically 1 ≤ n ≤ 2; n=1 ideal diffusion, n≈2 recombination/generation; n outside 1-2 indicates series resistance, high injection, or measurement error). Assumes forward exponential region, negligible series resistance, and constant temperature.